By Sherif Sedky
Sedky (physics, the yank collage, Cairo, Egypt) investigates the opportunity of constructing high quality MEMS structural layers at temperatures appropriate with the traditional CMOS backend. He first stories MEMS fabrication applied sciences, then defines the utmost thermal finances that may be accommodated by way of prefabricated usual electronics. He highlights the gains of other fabrics appropriate for MEMS, and discusses the impression of deposition stipulations and the kind of substrate at the actual homes of different fabrics. Silicon germanium as a MEMS structural layer is usually mentioned intimately.
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AlCu lines, 690 nm thick, are sandwiched between 20 nm of bottom Ti and 20nm Ti/60nm TiN top antireflective coating. Technology B has four interconnection levels. The first three are identical. 2(b)]. 2(c)]. 1(b)], the premetal dielectric layer is composed of 150-nm TEOS densified at 750°C for 30 minutes, 150 nm of USG cured at 750°C for 30 minutes, and 1,000 nm of LPCVD PSG annealed for 30 minutes at 750°C. This stack is planarized by CMP to a total thickness of 1,100 nm, including the field oxide.
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Post-Processing Techniques for Integrated MEMS by Sherif Sedky