Measurements

Read e-book online Dynamic Characterisation of Analogue-to-Digital Converters PDF

By Dominique Dallet

ISBN-10: 0387259023

ISBN-13: 9780387259024

ISBN-10: 0387259031

ISBN-13: 9780387259031

ISBN-10: 0387261214

ISBN-13: 9780387261218

The Analogue-to-digital converter (ADC) is the main pervasive block in digital structures. With the arrival of strong electronic sign processing and electronic communique suggestions, ADCs are quickly changing into serious parts for system’s functionality and suppleness. figuring out adequately all of the parameters that characterise their dynamic behaviour is essential, on one hand to choose the main enough ADC structure and features for every finish software, and nevertheless, to appreciate how they impact functionality bottlenecks within the sign processing chain.

Dynamic Characterisation of Analogue-to-Digital Converters offers a cutting-edge review of the tools and tactics hired for characterising ADCs’ dynamic functionality behaviour utilizing sinusoidal stimuli. the 3 classical equipment – histogram, sine wave becoming, and spectral research – are completely defined, and new methods are proposed to avoid a few of their limitations.

This is a must have compendium, that are utilized by either lecturers and attempt execs to appreciate the elemental arithmetic underlining the algorithms of ADC trying out, and as an instruction manual to assist the engineer within the most crucial and important info for his or her implementation.

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5 Two-Dimensional Model 80 μm, Ns squares 80 μm, Ns squares anode cathode 47 anode p−substrate n−well p +region n +region Fig. 9. Schematic representation of the simulated classical n-well diode, left: topview, right: cross-section. by Ns , and the influence on both responsivity and speed is investigated. On top of the structure are ohmic contacts (at anode and at cathode), and the contacts are separated by a 1 µm thick oxide layer. For simplicity, the rest of the dielectric stack is omitted. At the silicon-oxide interface, a surface recombination rate of 0 cm/s is supposed, corresponding to the ideal values of an insulator interface.

So for high-speed operation, the depletion region has to be sufficient wide, preferably wider than the penetration depth 1/α. Due to the high electrical field over the junction, the carriers attain their saturation velocity, which is approximately 107 cm/s in silicon [Mil79]. 1 ns for a 10 µm wide junction. Having a depletion region that encloses the absorption region is also the requirement for high quantum efficiency, as diffusing carriers might recombine before detection. 5, the intrinsic speed performance of CMOS photodiodes will be characterized by the 90 % rise time of the step response, the (intrinsic) frequency characteristic and the (intrinsic) bandwidth.

The satellite segments detect the side beams and supply signals for tracking control. The current signal from each diode segment is amplified separately by a transimpedance amplifier and post-amplifier channel. The channels from the signal diodes usually have a higher bandwidth than the more sensitive satellite channels. g. (A+B+C+D) is the wanted data signal, (A+C)-(B+D) is the focus signal and (F-E) is the tracking signal). 3 Binary Data Formats This section describes the binary data used in optical communication systems.

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Dynamic Characterisation of Analogue-to-Digital Converters by Dominique Dallet


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