By Karl Schneider
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Additional info for Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors
2 V. A comparison of the output characteristics of all three layer structures at IB = 200μA is given in Fig. 19. Figs. 21 show the Gummel plot and the current gain, respectively. The Gummel plot is compared with the results from structure B. The data show that the blocking eﬀect is much weaker in structure C. 1, respectively. The comparison of the current gains for all three structures shows, that the maximum gain is 90 in the optimized structure (C), higher than in the other structures. 18: Output characteristic of a transistor from layer structure C.
As a consequence, the goal of the optimization process is to achieve fmax ≈ fT . Second, the turnon voltage and the saturation voltage ought to be decreased to enable operation at higher current densities without increasing the power consumption. Higher current densities would reduce the diﬀerential resistance Rje of the emitter-base junction (s. Eq. 6) and support higher values for the high-frequency parameters (s. Eqs. 6). Third, a larger current gain would be beneﬁcial for the design of high gain ampliﬁers.
The comparison of the current gains for all three structures shows, that the maximum gain is 90 in the optimized structure (C), higher than in the other structures. 18: Output characteristic of a transistor from layer structure C. 30 2. 19: Comparison of output characteristics from diﬀerent layer structures at a base current of 200 μA. Layer structure C displays the lowest turn-on and saturation voltage as well as the highest current gain. 20: Comparison of the Gummel plots from layer structure B and C.
Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors by Karl Schneider