Algorithms And Data Structures

Get Broadband Amplifiers for High Data Rates using InP InGaAs PDF

By Karl Schneider

ISBN-10: 3866440219

ISBN-13: 9783866440210

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Additional info for Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors

Example text

2 V. A comparison of the output characteristics of all three layer structures at IB = 200μA is given in Fig. 19. Figs. 21 show the Gummel plot and the current gain, respectively. The Gummel plot is compared with the results from structure B. The data show that the blocking effect is much weaker in structure C. 1, respectively. The comparison of the current gains for all three structures shows, that the maximum gain is 90 in the optimized structure (C), higher than in the other structures. 18: Output characteristic of a transistor from layer structure C.

As a consequence, the goal of the optimization process is to achieve fmax ≈ fT . Second, the turnon voltage and the saturation voltage ought to be decreased to enable operation at higher current densities without increasing the power consumption. Higher current densities would reduce the differential resistance Rje of the emitter-base junction (s. Eq. 6) and support higher values for the high-frequency parameters (s. Eqs. 6). Third, a larger current gain would be beneficial for the design of high gain amplifiers.

The comparison of the current gains for all three structures shows, that the maximum gain is 90 in the optimized structure (C), higher than in the other structures. 18: Output characteristic of a transistor from layer structure C. 30 2. 19: Comparison of output characteristics from different layer structures at a base current of 200 μA. Layer structure C displays the lowest turn-on and saturation voltage as well as the highest current gain. 20: Comparison of the Gummel plots from layer structure B and C.

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Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors by Karl Schneider


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